PHB50N03T Datasheet - NXP

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PHB50N03T TrenchMOS transistor Standard level FET

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

PHB50N03T_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHB50N03T

Manufacturer:

NXP ↗

File Size:

63.66 KB

Description:

TrenchMOS transistor Standard level FET

Applications

* PHB50N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 50 94 175 21 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESC

PHB50N03T Distributors

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PHB50N03T TrenchMOS transistor Standard level FET NXP

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