PHB50N06T Datasheet, Transistor, NXP

✔ PHB50N06T Features

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching appli

✔ PHB50N06T Application

PHB50N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current

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Part number:

PHB50N06T

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📄 Datasheet

Description:

Transistor. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’t

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PHB50N06T Transistor NXP