PHB6ND50E Transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

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PHB6ND50E Datasheet Preview — Preview of PHB6ND50E PDF

Datasheet Specifications

Part number: PHB6ND50E
Manufacturer: NXP ↗
File Size: 64.40 KB
Datasheet: PHB6ND50E_PhilipsSemiconductors.pdf
Description: Transistor

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g

PHB6ND50E Distributors

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PHB6ND50E Transistor NXP

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