PHB80N06T Transistor

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

📥 Download Datasheet

PHB80N06T Datasheet Preview — Preview of PHB80N06T PDF

Datasheet Specifications

Part number: PHB80N06T
Manufacturer: NXP ↗
File Size: 70.50 KB
Datasheet: PHB80N06T_PhilipsSemiconductors.pdf
Description: Transistor

Applications

* PHB80N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 75 178 175 14 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DE

PHB80N06T Distributors

📁 Related Datasheet

PHB-5R0H155-R PHB-5R0H255-R PHB-5R0H305-R PHB-5R0H505-R PHB-5R0V155-R PHB-5R0V255-R

📌 All Tags

PHB80N06T Transistor NXP

NXP PHB80N06T-like datasheet