PHB87N03T Transistor

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

📥 Download Datasheet

PHB87N03T Datasheet Preview — Preview of PHB87N03T PDF

Datasheet Specifications

Part number: PHB87N03T
Manufacturer: NXP ↗
File Size: 65.94 KB
Datasheet: PHB87N03T_PhilipsSemiconductors.pdf
Description: Transistor

Applications

* PHB87N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 75 142 175 10.5 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain

PHB87N03T Distributors

📁 Related Datasheet

PHB-5R0H155-R PHB-5R0H255-R PHB-5R0H305-R PHB-5R0H505-R PHB-5R0V155-R PHB-5R0V255-R

📌 All Tags

PHB87N03T Transistor NXP

NXP PHB87N03T-like datasheet