PHB8N50E Transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

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Datasheet Specifications

Part number: PHB8N50E
Manufacturer: NXP ↗
File Size: 90.77 KB
Datasheet: PHB8N50E_PhilipsSemiconductors.pdf
Description: Transistor

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP8N50E, PHB8N50E, PHW8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DE

PHB8N50E Distributors

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PHB8N50E Transistor NXP

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