PHB8ND50E Transistors

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

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Datasheet Specifications

Part number: PHB8ND50E
Manufacturer: NXP ↗
File Size: 91.19 KB
Datasheet: PHB8ND50E_PhilipsSemiconductors.pdf
Description: Transistors

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s tr

PHB8ND50E Distributors

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PHB8ND50E Transistors NXP

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