Datasheet4U Logo Datasheet4U.com

PHC20512 - MOSFET

Datasheet Summary

Description

One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.

📥 Download Datasheet

Datasheet preview – PHC20512

Datasheet Details

Part number PHC20512
Manufacturer NXP
File Size 158.88 KB
Description MOSFET
Datasheet download datasheet PHC20512 Datasheet
Additional preview pages of the PHC20512 datasheet.

📁 Similar Datasheet

  • PHC21025 - Complementary enhancement mode MOS transistors (Philips)
  • PHCT102 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
  • PHCT103 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
  • PHCT104 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
  • PHCT202 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
  • PHCT203 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
  • PHCT204 - TRANSMITTER OPTOELETRONIC KEYS (ETC)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
Published: |