PHP6N10E PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fa.

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Datasheet Specifications

Part number: PHP6N10E
Manufacturer: NXP ↗
File Size: 53.42 KB
Datasheet: PHP6N10E_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

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PHP6N10E PowerMOS transistor NXP

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