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PHPT60606NY - NPN high power bipolar transistor

Description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

2.

Features

  • High thermal power dissipation capability.
  • High temperature.

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Datasheet Details

Part number PHPT60606NY
Manufacturer NXP
File Size 233.93 KB
Description NPN high power bipolar transistor
Datasheet download datasheet PHPT60606NY Datasheet
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Full PDF Text Transcription

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PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified. 3. Applications • Power management • Load switch • Linear mode voltage regulator • Backlighting applications • Relay replacement • Motor drive 4. Quick reference data Table 1.
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