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PHX27NQ11T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 14 May 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s Isolated package.
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data
s VDS ≤ 110 V s Ptot ≤ 50 W s ID ≤ 20.8 A s RDSon ≤ 50 mΩ.
2.
PHX27NQ11T Datasheet
