PHX6N60E - N-Channel 650V Power MOSFET

Datasheet Summary

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

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Datasheet Details

Part number	PHX6N60E
Manufacturer	VBsemi
File Size	286.60 KB
Description	N-Channel 650V Power MOSFET
Datasheet	PHX6N60E Datasheet
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PHX6N60E-VB PHX6N60E-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.

Published: May 25, 2025 |