Datasheet4U Logo Datasheet4U.com

PHX6ND50E Datasheet - NXP

PHX6ND50E PowerMOS transistors FREDFET/ Avalanche energy rated

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. T.

PHX6ND50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Isolated package

* Fast reverse recovery diode PHX6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 3.1 A g RDS(ON) ≤ 1.5 Ω s

PHX6ND50E Datasheet (60.73 KB)

Preview of PHX6ND50E PDF
PHX6ND50E Datasheet Preview Page 2 PHX6ND50E Datasheet Preview Page 3

Datasheet Details

Part number:

PHX6ND50E

Manufacturer:

NXP ↗

File Size:

60.73 KB

Description:

Powermos transistors fredfet/ avalanche energy rated.

📁 Related Datasheet

PHX6N50E PowerMOS transistors Avalanche energy rated (NXP)

PHX6N60E PowerMOS transistors (NXP)

PHX6N60E N-Channel 650V Power MOSFET (VBsemi)

PHX6NA60E PowerMOS transistors Low capacitance Avalanche energy rated (NXP)

PHX10N40E PowerMOS transistors Avalanche energy rated (NXP)

PHX14NQ20T N-channel TrenchMOS transistor (NXP)

PHX15N06E PowerMOS transistor Isolated version of PHP20N06E (NXP)

PHX18NQ11T N-channel TrenchMOS standard level FET (NXP Semiconductors)

TAGS

PHX6ND50E PowerMOS transistors FREDFET Avalanche energy rated NXP

PHX6ND50E Distributor