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PHX6ND50E PowerMOS transistors FREDFET/ Avalanche energy rated

PHX6ND50E Description

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

PHX6ND50E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Isolated package
* Fast reverse recovery diode PHX6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 3.1 A g RDS(ON) ≤ 1.5 Ω s

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PowerMOS transistors FREDFET Avalanche energy rated NXP
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