PHX6ND50E Datasheet (NXP) - PowerMOS transistors FREDFET/ Avalanche energy rated

PHX6ND50E, PowerMOS transistors FREDFET/ Avalanche energy rated

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

PHX6ND50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Isolated package

* Fast reverse recovery diode PHX6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 3.1 A g RDS(ON) ≤ 1.5 Ω s