PHX6NA60E

PowerMOS transistors Low capacitance Avalanche energy rated

NXP

Download Datasheet (25.62 KB)

PHX6NA60E Datasheet Preview — Preview of PHX6NA60E Datasheet

Datasheet Details

Part number:

PHX6NA60E

Manufacturer:

NXP ↗

File Size:

25.62 KB

Download:

📥 PHX6NA60E Datasheet PDF

Description:

Powermos transistors low capacitance avalanche energy rated.
Philips Semiconductors Objective specification PowerMOS transistors Low capacitance Avalanche ener.
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mod.

✔ PHX6NA60E Features

Repetitive Avalanche Rated
Fast switching
Low feedback capacitance
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance P

✔ PHX6NA60E Application

The PHX6NA60E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain so

📁 Related Datasheet

PHX6N50E - PowerMOS transistors Avalanche energy rated (NXP)

PHX6N60E - PowerMOS transistors Avalanche energy rated (NXP)

PHX6ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated (NXP)

PHX10N40E - PowerMOS transistors Avalanche energy rated (NXP)

PHX14NQ20T - N-channel TrenchMOS transistor (NXP)

PHX15N06E - PowerMOS transistor Isolated version of PHP20N06E (NXP)

PHX18NQ11T - N-channel TrenchMOS standard level FET (NXP Semiconductors)

PHX18NQ20T - N-channel enhancement mode field-effect transistor (NXP)

TAGS

PHX6NA60E PowerMOS transistors Low capacitance Avalanche energy rated NXP