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PHX8ND50E Datasheet - NXP

PHX8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. T.

PHX8ND50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Isolated package

* Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 4.2 A g RDS(ON) ≤ 0.85 Ω

PHX8ND50E_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHX8ND50E

Manufacturer:

NXP ↗

File Size:

61.77 KB

Description:

Powermos transistors fredfet/ avalanche energy rated.

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PHX8ND50E PHX8ND50E PowerMOS transistors FREDFET Avalanche energy rated NXP

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