PMCXB900UE N/P-channel Trench MOSFET

NXP

Description

DF N1 0 PMCXB900UE 7 October 2013 10B -6 20 V, complementary N/P-channel Trench MOSFET Product data sheet 1.General .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) p.

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Datasheet Specifications

Part number: PMCXB900UE
Manufacturer: NXP ↗
File Size: 343.38 KB
Datasheet: PMCXB900UE_NXP.pdf
Description: N/P-channel Trench MOSFET

Applications

* VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications
* Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4

PMCXB900UE Distributors

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PMCXB900UE P-channel Trench MOSFET NXP

NXP PMCXB900UE-like datasheet