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PMCM6501VPE P-channel Trench MOSFET

PMCM6501VPE Description

WLCSP6 PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM6501VPE Features

* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology

PMCM6501VPE Applications

* Battery switch
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage -8 -

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Datasheet Details

Part number
PMCM6501VPE
Manufacturer
NXP ↗
File Size
358.11 KB
Datasheet
PMCM6501VPE-NXP.pdf
Description
P-channel Trench MOSFET

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