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PMCM650CUNE Common Drain N-channel Trench MOSFET

PMCM650CUNE Description

PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev.1.0 * 8 November 2017 Product data sheet WLCSP6 1 Product profile 1.1 Genera.
N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET tech.

PMCM650CUNE Features

* Common-drain type for bi-directional current flow
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology

PMCM650CUNE Applications

* Loadswitch
* Battery Protection
* Battery Management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VSS source-source voltage VGS gate-source voltage IS source current Static characteristics RSSon source-source on-state resistance Conditions T

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