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PMCM950ENE N-channel MOSFET

PMCM950ENE Description

PMCM950ENE 60 V, N-channel Trench MOSFET 13 May 2019 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM950ENE Features

* Low threshold voltage
* Ultra small package: 1.48 × 1.48 × 0.35 mm
* Trench MOSFET technology

PMCM950ENE Applications

* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistanc

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