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PMCM4401UPE P-channel MOSFET

PMCM4401UPE Description

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM4401UPE Features

* Low threshold voltage
* Ultra small package: 0.78 × 0.78 × 0.35 mm
* Trench MOSFET technology

PMCM4401UPE Applications

* Battery switch
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

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