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PMCM6501VNE N-channel Trench MOSFET

PMCM6501VNE Description

WLCSP6 PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM6501VNE Features

* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology

PMCM6501VNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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Datasheet Details

Part number
PMCM6501VNE
Manufacturer
NXP ↗
File Size
357.60 KB
Datasheet
PMCM6501VNE-NXP.pdf
Description
N-channel Trench MOSFET

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