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PMCM650VNE N-channel Trench MOSFET

PMCM650VNE Description

WLCSP6 PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM650VNE Features

* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology

PMCM650VNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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Datasheet Details

Part number
PMCM650VNE
Manufacturer
NXP ↗
File Size
366.84 KB
Datasheet
PMCM650VNE-NXP.pdf
Description
N-channel Trench MOSFET

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