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PMCM6501UPE P-channel Trench MOSFET

PMCM6501UPE Description

PMCM6501UPE 20 V, P-channel Trench MOSFET 3 July 2017 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

PMCM6501UPE Features

* Low threshold voltage
* Ultra small package: 0.98 x 1.48 x 0.35 mm
* Trench MOSFET technology

PMCM6501UPE Applications

* Battery switch
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-

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