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PMDT290UNE 800mA dual N-channel Trench MOSFET

PMDT290UNE Description

SO T6 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General desc.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

PMDT290UNE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMDT290UNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V;

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Datasheet Details

Part number
PMDT290UNE
Manufacturer
NXP ↗
File Size
156.55 KB
Datasheet
PMDT290UNE-NXP.pdf
Description
800mA dual N-channel Trench MOSFET

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800mA dual N-channel Trench MOSFET NXP
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