PMDT290UNE 800mA dual N-channel Trench MOSFET

NXP

Description

SO T6 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General desc.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

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Datasheet Specifications

Part number: PMDT290UNE
Manufacturer: NXP ↗
File Size: 156.55 KB
Datasheet: PMDT290UNE-NXP.pdf
Description: 800mA dual N-channel Trench MOSFET

Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V;

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PMDT290UNE 800mA dual N-channel Trench MOSFET NXP

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