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PMDT290UCE 800 / 550 mA N/P-channel Trench MOSFET

PMDT290UCE Description

SO T6 PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev.1 * 6 October 2011 Product data sheet 1.Product profile 1.1 General.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic p.

PMDT290UCE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMDT290UCE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage gate-source voltage drain current d

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800 550 P-channel Trench MOSFET NXP Semiconductors
NXP Semiconductors PMDT290UCE-like datasheet