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PMDPB38UNE 20V dual N-channel Trench MOSFET

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Description

PMDPB38UNE 26 September 2012 20 V dual N-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic pack.

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Features

* Very fast switching
* Trench MOSFET technology
* Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
* Exposed drain pad for excellent thermal conduction

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon dra

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