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PMDPB56XNEA dual N-channel MOSFET

PMDPB56XNEA Description

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic packa.

PMDPB56XNEA Features

* Trench MOSFET technology
* Low threshold voltage
* Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* AEC-Q101 quali

PMDPB56XNEA Applications

* LED driver
* Power management
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.

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