PMDPB42UN dual N-channel Trench MOSFET

NXP Semiconductors

Description

PMDPB42UN 020 -6 20 V, dual N-channel Trench MOSFET Rev.1 * 16 May 2012 Product data sheet 1.Product profile 1.1 General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plas.

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Datasheet Specifications

Part number: PMDPB42UN
Manufacturer: NXP ↗ Semiconductors
File Size: 369.50 KB
Datasheet: PMDPB42UN-NXPSemiconductors.pdf
Description: dual N-channel Trench MOSFET

Features

* Very fast switching
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage g

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PMDPB42UN dual N-channel Trench MOSFET NXP Semiconductors

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