PMDPB58UPE 20V dual P-channel Trench MOSFET

NXP Semiconductors

Description

PMDPB58UPE 020 -6 20 V dual P-channel Trench MOSFET Rev.1 * 19 June 2012 Product data sheet 1.Product profile 1.1 General .
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD).

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Datasheet Specifications

Part number: PMDPB58UPE
Manufacturer: NXP ↗ Semiconductors
File Size: 330.96 KB
Datasheet: PMDPB58UPE-NXPSemiconductors.pdf
Description: 20V dual P-channel Trench MOSFET

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s V

PMDPB58UPE Distributors

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PMDPB58UPE 20V dual P-channel Trench MOSFET NXP Semiconductors

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