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PMDT670UPE MOSFET

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Description

SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General desc.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

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Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5

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