* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID
PMDT670UPE Datasheet (171.75 KB)
PMDT670UPE
NXP ↗ Semiconductors
171.75 KB
Mosfet.
SO T6
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev. 1
* 13 September 2011 Product data sheet
1. Product profile
1.1 General desc.
📁 Related Datasheet
PMDT670UPE dual P-channel MOSFET (nexperia)
PMDT290UCE 800 / 550 mA N/P-channel Trench MOSFET (NXP Semiconductors)
PMDT290UCE N/P-channel MOSFET (nexperia)
PMDT290UNE 800mA dual N-channel Trench MOSFET (NXP)
PMDT290UNE dual N-channel MOSFET (nexperia)
PMD02N60N N-Channel MOSFETs (Potens semiconductor)
PMD03N80R N-Channel MOSFETs (Potens semiconductor)
PMD04N65M N-Channel MOSFETs (Potens semiconductor)
PMD05N50M N-Channel MOSFETs (Potens semiconductor)
PMD10K SILICON POWER DARLING TRANSISTORSl (Central Semiconductor Corp)
