PMV65XPEA P-channel Trench MOSFET

NXP

Description

SOT23 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV65XPEA
Manufacturer: NXP ↗
File Size: 236.75 KB
Datasheet: PMV65XPEA-NXP.pdf
Description: P-channel Trench MOSFET

Features

* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 890 mW
* ElectroStatic Discharge (ESD) protection 2 kV HBM

Applications

* Relay driver
* High speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 -

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PMV65XPEA P-channel Trench MOSFET NXP

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