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PMV65UNEA N-channel MOSFET

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Description

PMV65UNEA 20 V, N-channel Trench MOSFET 17 March 2017 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Trench MOSFET technology
* Low threshold voltage
* Enhanced power dissipation capability of 940 mW
* ElectroStatic Discharge (ESD) protection > 2KV HBM

Applications

* LED driver
* Power management
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-s

PMV65UNEA Distributors

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