PMZ600UNE N-channel Trench MOSFET

NXP

Description

PMZ600UNE 26 June 2014 SO T8 83 20 V, N-channel Trench MOSFET Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

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Datasheet Specifications

Part number: PMZ600UNE
Manufacturer: NXP ↗
File Size: 231.31 KB
Datasheet: PMZ600UNE-NXP.pdf
Description: N-channel Trench MOSFET

Applications

* Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; I

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PMZ600UNE N-channel Trench MOSFET NXP

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