PSMN1R5-25YL Datasheet, Fet, NXP

PSMN1R5-25YL Features

• Fet
• High efficiency due to low switching and conduction losses
• Suitable for logic level gate drive sources 1.3 Applications
• Class-D amplifiers
• DC-to

PDF File Details

Part number:

PSMN1R5-25YL

Manufacturer:

NXP ↗

File Size:

239.39kb

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📄 Datasheet

Description:

N-channel fet. Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is

PSMN1R5-25YL Application

• Applications 1.2 Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for logic level gat

TAGS

PSMN1R5-25YL

NXP

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