PSMN1R5-40YSD - N-channel MOSFET

nexperia

Datasheet Details

240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

240 A continuous ID(max) rating.
Avalanche rated, 100% tested at IAS = 190 A.
Strong SOA (linear-mode) rating.
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage.
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qua.

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Published: Jun 4, 2019 |