* High reliability Power SO8 package, qualified to 175°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 1.3 Appl
PSMN1R8-40YLC Datasheet (232.10 KB)
PSMN1R8-40YLC
232.10 KB
Mosfet.
PSMN1R8-40YLC
22 August 2012
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Product data sheet
1. Product profile
1.1.
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