PSMN6R3-120ES N-channel MOSFET

NXP

PSMN6R3-120ES Description

I2PAK PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1.General .
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C.

PSMN6R3-120ES Features

* High efficiency due to low switching and conduction losses
* Improved dynamic avalanche performance
* Suitable for standard level gate drive

PSMN6R3-120ES Applications

* 3. Applications
* AC-to-DC power supply
* Synchronous rectification
* Motor control
* Slimline adaptors & chargers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain curr

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Datasheet Details

Part number: PSMN6R3-120ES
Manufacturer: NXP ↗
File Size: 249.30 KB
Datasheet: PSMN6R3-120ES-NXP.pdf
Description: N-channel MOSFET

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