* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC-t
PSMN6R0-25YLB Datasheet (888.19 KB)
PSMN6R0-25YLB
888.19 KB
N-channel mosfet.
PSMN6R0-25YLB
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 2
* 31 October 2011
Product data sheet
1. .
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