Datasheet4U Logo Datasheet4U.com

BUK6207-30C - N-channel TrenchMOS intermediate level FET

BUK6207-30C Description

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev.2 * 1 October 2010 Product data sheet 1.Product profile 1.1 General descript.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK6207-30C Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

📥 Download Datasheet

Preview of BUK6207-30C PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK624R5-30C - N-channel TrenchMOS Intermediate Level FET (NXP)
  • BUK625R2-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK637-400B - Power MOS Transistor / Fast Recovery Diode FET (NXP)
  • BUK637-500B - N-Channel MOSFET (INCHANGE)
  • BUK638-1000 - PowerMOS Transistor / Fast Recovery Diode FET (NXP)

📌 All Tags

N-channel TrenchMOS intermediate level FET NXP Semiconductors
NXP Semiconductors BUK6207-30C-like datasheet