Datasheet4U.com

100NS - Standard Recovery Diodes

Naina Semiconductor

📥 Download Datasheet

100NS Datasheet Preview — Preview of 100NS PDF

datasheet Preview Page 2

Datasheet Details

Part number	100NS
Manufacturer	Naina Semiconductor
File Size	103.04 KB
Description	Standard Recovery Diodes
Datasheet	100NS_NainaSemiconductor.pdf

100NS Product details

Features

Diffused Series.
Industrial grade.
Available in Normal and Reverse polarity.
Metric and UNF thread type 100 100NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM It 2 Parameters Maximum avg. forward current @ TE = O 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum peak repetitive surg.

📁 100NS Similar Datasheet

100N02 - N-CHANNEL MOSFET (UTC)
100N03 - N-CHANNEL MOSFET (KIA)
100N03L - N-Channel MOSFET (STMicroelectronics)
100N055 - Power MOSFET (IXYS Corporation)
100N06L - N-Channel MOSFET (VBsemi)
100N10 - N-Channel PowerTrench MOSFET (ETC)
100N10B - Power MOSFET (ON Semiconductor)
100N10F7 - N-channel Power MOSFET (STMicroelectronics)

Other Datasheets by Naina Semiconductor

100NS10 - Standard Recovery Diodes
100NS100 - Standard Recovery Diodes
100NS120 - Standard Recovery Diodes
100NS140 - Standard Recovery Diodes
100NS160 - Standard Recovery Diodes
100NS20 - Standard Recovery Diodes

Published: Dec 7, 2011 |