1N5829 - (1N5829 - 1N5831R) Schottky Power Diode

Naina Semiconductor

Datasheet Details

Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5829 thru 1N5831R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp = 8.3 ms IF = 25 A.

📁 1N5829 Similar Datasheet

1N5820 - SCHOTTKY BARRIER RECTIFIERS (MotorolaInc)
1N5820-G - Schottky Barrier Rectifier (Comchip Technology)
1N5820S - SCHOTTKY BARRIER RECTIFIER DIODES (EIC discrete Semiconductors)
1N5820US - 3 AMP SCHOTTKY BARRIER RECTIFIERS (Compensated Deuices Incorporated)
1N5821 - Schottky Diodes (Kexin)
1N5821-G - Schottky Barrier Rectifier (Comchip Technology)
1N5821S - SCHOTTKY BARRIER RECTIFIER DIODES (EIC discrete Semiconductors)
1N5821US - 3 AMP SCHOTTKY BARRIER RECTIFIERS (Compensated Deuices Incorporated)

Other Datasheets by Naina Semiconductor

1N5829R - (1N5829 - 1N5831R) Schottky Power Diode
1N5826 - (1N5826 - 1N5828R) Schottky Power Diode
1N5826R - (1N5826 - 1N5828R) Schottky Power Diode
1N5827 - (1N5826 - 1N5828R) Schottky Power Diode
1N5827R - (1N5826 - 1N5828R) Schottky Power Diode
1N5828 - (1N5826 - 1N5828R) Schottky Power Diode

Published: May 18, 2013 |