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MBR30045CTR - Schottky Power Diode

This page provides the datasheet information for the MBR30045CTR, a member of the MBR30045CT Schottky Power Diode family.

Datasheet Summary

Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER.

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Datasheet preview – MBR30045CTR

Datasheet Details

Part number MBR30045CTR
Manufacturer Naina Semiconductor
File Size 185.78 KB
Description Schottky Power Diode
Datasheet download datasheet MBR30045CTR Datasheet
Additional preview pages of the MBR30045CTR datasheet.

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Full PDF Text Transcription

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A IFSM 2500 http://www.DataSheet4U.
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