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N16L163WC2C - 16Mb Ultra-Low Power Asynchronous CMOS SRAM

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Description

Stock No.

Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts.
  • Very low standby current 2.5µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs(Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.5V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power down to standby mode.

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Datasheet Details

Part number N16L163WC2C
Manufacturer NanoAmp Solutions
File Size 305.38 KB
Description 16Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N16L163WC2C Datasheet
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www.DataSheet4U.com NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N16L163WC2C Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit Overview The N16L163WC2C is an integrated memory device containing a 8Mbit Static Random Access Memory organized as 1,048,576 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.
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