N16L163WC2C Datasheet (NanoAmp Solutions) - 16Mb Ultra-Low Power Asynchronous CMOS SRAM

N16L163WC2C, 16Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A19 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected Do Not Use Stock No.

23383-C The specifications of this

www.DataSheet4U.com NanoAmp Solutions, Inc.

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Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N16L163WC2C Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit Overview The N16L163WC2C is an integrated memory device containing a 8Mbit Static Random Access Memory organized as 1,048,576 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed perfo

N16L163WC2C Features

* Single Wide Power Supply Range 2.2 to 3.6 Volts

* Very low standby current 2.5µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs(Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output