N32T1630C1C Datasheet - NanoAmp Solutions

N32T1630C1C 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

Pin Name A0-A20 WE CE OE UB,LB ZZ I/O0-I/O15 VCC VCCQ VSS VSSQ DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Byte Enable Inputs Deep Sleep Input Data Inputs/Outputs Core Power I/O Power Ground I/O Ground Do Not Use 2 OE UB I/O10 3 A0 A3 A5 A17 DNU/ VSS A.

www.DataSheet4U.com NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N32T1630C1C 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM w/ Page Mode Operation (2M x 16 bit) Overview The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to pr.

N32T1630C1C Features

* Dual voltage for Optimum Performance: VccQ - 2.7 to 3.6 Volts Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ)

* Fast random access time 70ns at 2.7V

* Very fast page mode access time 25ns page cycle and access

* Very low standby current 80µA V (Typical)

* Very low opera

N32T1630C1C_NanoAmpSolutions.pdf