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NT5DS64M4BW, NT5DS16M16BW Datasheet - Nanya Techology

NT5DS64M4BW (NT5DSxxMxBx) 256Mb DDR SDRAM

The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations. An Auto Precharge function may be enabled to provide a sel.

NT5DS64M4BW Features

* CAS Latency and Frequency Maximum Operating Frequency (MHz)

* DDR333 DDR266B (-6K)

* (-75B) 2 133 100 2.5 166 133

* -6K also meets DDR266A Spec (MHz-CL-tRCD-tRP = 133-2-3-3) CAS Latency

NT5DS16M16BW_NanyaTechology.pdf

This datasheet PDF includes multiple part numbers: NT5DS64M4BW, NT5DS16M16BW. Please refer to the document for exact specifications by model.
NT5DS64M4BW Datasheet Preview Page 2 NT5DS64M4BW Datasheet Preview Page 3

Datasheet Details

Part number:

NT5DS64M4BW, NT5DS16M16BW

Manufacturer:

Nanya Techology

File Size:

1.87 MB

Description:

(nt5dsxxmxbx) 256mb ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: NT5DS64M4BW, NT5DS16M16BW.
Please refer to the document for exact specifications by model.

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NT5DS64M4BW NT5DS16M16BW NT5DSxxMxBx 256Mb DDR SDRAM Nanya Techology

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