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MM74C910 256 Bit Tri-state Random Access Read/write Memory

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Description

MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memory September 1989 MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memo.
The MM54C910 MM74C910 is a 64 word by 4-bit random access memory Inputs consist of six address lines four data input lines a WE and a ME line The six.

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Datasheet Specifications

Part number
MM74C910
Manufacturer
National Semiconductor
File Size
204.99 KB
Datasheet
MM74C910_NationalSemiconductor.pdf
Description
256 Bit Tri-state Random Access Read/write Memory

Features

* Y Y Y Y Y Supply voltage range High noise immunity TTL compatible fan out Input address register Low power consumption Fast access time TRI-STATE outputs High voltage inputs 3 0V to 5 5V 0 45VCC (typ ) 1 TTL load 250 nW package (typ ) (chip enabled or disabled) 250 ns (typ ) at 5 0V Y Y Y Logic

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