IRF13N50 Datasheet (Nell) - N-Channel Power MOSFET

IRF13N50, N-Channel Power MOSFET

The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

They are designed as an extremely efficient and reliable device for use in a wide variety of a

IRF13N50 Features

* RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(n