2N3375
New Jersey Semi-Conductor
214.34kb
Rf & microwave transistors.
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2N337 - Silicon Transistors
(Advanced)
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2N3370 - n-channel JFET
(Siliconix)
n-cha'1nel JFETs
design1ed for • • •
• Small-Si ~nal Low Power Applicati
2N3375 - RF & MICROWAVE TRANSISTORS
(Microsemi Corporation)
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2N3375 - NPN silicon RF Power transistors
(Motorola)
2N3375(SILlCON)\ 2N3553
2N3632 2N 3961
•CASE 79
(10·39)
2N3553
·'·CASE 24
(10·102)
2N3961
* Collector Connected
·CASE 36
(10·60)
to Case .. Col.
2N3375 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
2N3375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering.
2N3300 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3300 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3300 - Bipolar NPN Device
(Seme LAB)
2N3300
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N3300 - Transistor
(New Jersey Semi-Conductor)
.
2N3301 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
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