* Integrated gate protection diodes
* High cross modulation performance
* Low noise figure
* High AGC-range
* Low feedback capacitance
* Low input capacitance -OD BF961 Marking: BF961 ^ Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2
BF961
New Jersey Semi-Conductor
89.73 KB
N-channel dual gate mos-fieldeffect tetrode.
<£e.mi-Condu.cioi ZPioducti, fine.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BF961
TELEPHONE: (973) 376-2922 (212) 227-6005
FAX: (973) 376.
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