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BF960NF06 - N-Channel MOSFET

BF960NF06 Description

BYD Microelectronics Co., Ltd.BF960NF06 60V N-Channel MOSFET General .
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

BF960NF06 Features

* z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS

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Datasheet Details

Part number
BF960NF06
Manufacturer
BYD
File Size
242.23 KB
Datasheet
BF960NF06-BYD.pdf
Description
N-Channel MOSFET

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