BF960NF06 Datasheet, Mosfet, BYD

BF960NF06 Features

• Mosfet z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Dra

PDF File Details

Part number:

BF960NF06

Manufacturer:

BYD

File Size:

242.23kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as pr

BF960NF06 Application

• Applications It is also intended for any application with low gate drive requirement. Features z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS

TAGS

BF960NF06

BYD

📁 Related Datasheet

BF960NF06T - N-Channel MOSFET (BYD)
BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimi.

BF960 - N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE (Vishay Telefunken)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.

BF961 - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF961 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling..

BF961 - N-Channel Dual Gate MOS-Fieldeffect Tetrode (New Jersey Semi-Conductor)
<£e.mi-Condu.cioi ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF961 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376.

BF963 - Silicon N-Channel MOSFET Tetrode (Siemens)
w w a D . w S a t e e h U 4 t m o .c w w w .D a t a e h S t e U 4 .c m o w w w a t a D . e h S 4 t e U m o .c .

BF964 - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.

BF964S - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.

BF965 - Silicon N-Channel MOSFET Tetrode (Siemens)
w w a D . w S a t e e h U 4 t m o .c w w w .D a t a e h S t e U 4 .c m o w w w a t a D . e h S 4 t e U m o .c .

BF966 - N-Channel Dual Gate MOS Fieldeffect Tetrod (Telefunken)
.. .. .. .. .. .. .. .

BF966S - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.